| 2014-09 |
Non-toxically enhanced sulfur reaction for formation of chalcogenide thin films using a thermal cracker |
JOURNAL OF MATERIALS CHEMISTRY A
|
| 2014-08 |
Defect-free erbium silicide formation using an ultrathin Ni interlayer |
ACS APPLIED MATERIALS & INTERFACES
|
| 2014-05 |
The effect of Al2O3 passivation layer in pulsed-laser-deposited ZrO2 films on n-GaAs substrate as a function of post-annealing temperature |
THIN SOLID FILMS
|
| 2014-04 |
Only the chemical state of Indium changes in Mn-doped In3Sb1Te2 (Mn: 10 at.%) during multi-level resistance changes |
SCIENTIFIC REPORTS
|
| 2014-03 |
Effects of nitrogen incorporation in HfO2 grown on InP by atomic layer deposition: An evolution in structural, chemical, and electrical characteristics |
ACS APPLIED MATERIALS & INTERFACES
|
| 2014-03 |
Structural deformation and void formation driven by phase transformation in the Ge2Sb2Te5 film |
JOURNAL OF MATERIALS CHEMISTRY C
|
| 2014-02 |
High concentration of nitrogen doped into graphene using N-2 plasma with an aluminum oxide buffer layer |
JOURNAL OF MATERIALS CHEMISTRY C
|
| 2013-12 |
Hydrogen sensing under ambient conditions using SnO2 nanowires: Synergetic effect of Pd/Sn codeposition |
NANO LETTERS
|
| 2013-11 |
Interfacial reaction induced strain relaxation in Hf-silicate film on strained Si0.7Ge0.3 (001) as a function of annealing temperature |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2013-11 |
Synthesis of self-ordered Sb2Te2 films with atomically aligned Te layers and the effect of phonon scattering modulation |
JOURNAL OF MATERIALS CHEMISTRY C
|
| 2013-10 |
Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels |
Microelectronic Engineering
|
| 2013-10 |
Control of the interfacial reaction in HfO2 on Si-passivated GaAs |
APPLIED SURFACE SCIENCE
|
| 2013-09 |
The effect of structural and chemical bonding changes on the optical properties of Si/Si1-xCx core/shell nanowires |
JOURNAL OF MATERIALS CHEMISTRY C
|
| 2013-08 |
Change in crystalline structure and band alignment in atomic-layer-deposited HfO2 on InP using an annealing treatment |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2013-07 |
Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2013-06 |
Improved growth behavior of atomic-layer-deposited high- k dielectrics on multilayer MoS2 by oxygen plasma pretreatment |
ACS APPLIED MATERIALS & INTERFACES
|
| 2013-06 |
Strongly enhanced THz emission caused by localized surface charges in semiconducting germanium nanowires |
SCIENTIFIC REPORTS
|
| 2013-06 |
The diffusion of silicon atoms in stack structures of La2O3 and Al2O3 |
Current Applied Physics
|
| 2013-03 |
Structural evolution and the control of defects in atomic layer deposited HfO2-Al2O3 stacked films on GaAs |
ACS APPLIED MATERIALS & INTERFACES
|
| 2013-03 |
Effects of surface chemical structure on the mechanical properties of Si1-xGex nanowires |
NANO LETTERS
|
| 2013-03 |
Hall mobility manipulation in TiO2-x semiconductor films by hydrogen-ion irradiation |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2012-10 |
Generation of planar defects caused by the surface diffusion of Au atoms on SiNWs |
MATERIALS RESEARCH BULLETIN
|
| 2012-10 |
Characteristics of phase transition and separation in a In-Ge-Sb-Te system |
APPLIED SURFACE SCIENCE
|
| 2012-10 |
Thin-film transistor behaviour and the associated physical origin of water-annealed In-Ga-Zn oxide semiconductor |
JOURNAL OF PHYSICS D-APPLIED PHYSICS
|
| 2012-07 |
Induction of the surface plasmon resonance from C-incorporated Au catalyst in Si1-xCx nanowires |
JOURNAL OF MATERIALS CHEMISTRY
|
| 2012-06 |
Effect of amorphization on the structural stability and reversibility of Ge2Sb2Te5 and oxygen incorporated Ge2Sb2Te5 films |
JOURNAL OF MATERIALS CHEMISTRY
|
| 2012-06 |
Temperature-dependent Catalyst-free Growth of ZnO Nanostructures on Si and SiO2/Si Substrates via Thermal Evaporation |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2012-06 |
Thermal instability of HfO2 on InP structure with ultrathin Al2O3 interface passivation layer |
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
|
| 2012-06 |
Solution-deposited GdCeO x thin films: Microstructure, band structure, and dielectric property |
MATERIALS RESEARCH BULLETIN
|
| 2012-06 |
Effect of nitrogen incorporation and oxygen vacancy on electronic structure and the absence of a gap state in HfSiO films |
SURFACE SCIENCE
|
| 2012-05 |
Change of Resistive-switching in TiO2 Films with Additional HfO2 Thin Layer |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2012-04 |
High-mobility Property of Crystallized In-Te Chalcogenide Materials |
ELECTRONIC MATERIALS LETTERS
|
| 2012-03 |
The oxidation characteristics of silicon nanowires grown with an Au catalyst |
NANO RESEARCH
|
| 2012-02 |
Phase Transformation of Alternately Layered Bi/Se Structures to Well-Ordered Single Crystalline Bi2Se3 Structures by a Self-Organized Ordering Process |
JOURNAL OF PHYSICAL CHEMISTRY C
|
| 2012-01 |
Thermal Stability of ALD-HfO2/GaAs Pretreated with Trimethylaluminium |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2012-01 |
Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2011-08 |
The modulation of Si1-xGex nanowires by correlation of inlet gas ratio with H-2 gas content |
CRYSTENGCOMM
|
| 2011-07 |
Enhanced Electrical Properties of SrTiO(3) Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2011-07 |
Luminescent mechanism of Eu3+-doped epitaxial Gd2O3 films grown on a Si (111) substrate using an effusion cell |
Current Applied Physics
|
| 2011-07 |
Phase Transformation through Metastable Structures in Atomically Controlled Se/Sb MultiLayers |
JOURNAL OF PHYSICAL CHEMISTRY C
|
| 2011-06 |
Defect states in epitaxial HfO2 films induced by atomic transport from n-GaAs (100) substrate |
JOURNAL OF APPLIED PHYSICS
|
| 2011-06 |
Interfacial reaction induced phase separation in LaxHfyO films |
JOURNAL OF APPLIED PHYSICS
|
| 2011-05 |
Effect of Incorporated Nitrogen on the Band Alignment of Ultrathin Silicon-oxynitride Films as a Function of the Plasma Nitridation Conditions |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2011-04 |
Interfacial Self-Cleaning during PEALD HfO2 Process on GaAs Using TDMAH/O-2 with Different (NH4)(2)S Cleaning Time |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2011-04 |
A Triple-Layered Microcavity Structure for Electrophoretic Image Display |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
| 2011-04 |
Control of the Workfunction in Bilayer Metal Gate Stacks by Varying the First Layer Thickness |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2011-04 |
Effects of Nitrogen on Endurance of N-doped Ge2Sb2Te5 Films During Laser-Induced Reversible Switching |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2011-04 |
Comparison of the Crystallization Behaviors in As-Deposited and Melt-Quenched N-Doped Ge2Sb2Te5 Thin Films |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2011-03 |
The Phase Change Effect of Oxygen-Incorporation in GeSbTe Films |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2011-02 |
Effects of Interface Al2O3 Passivation Layer for High-k HfO2 on GaAs |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2011-02 |
The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface |
APPLIED PHYSICS LETTERS
|
| 2011-01 |
Changes in Electronic Structure of LaxAlyO Films as a Function of Postdeposition Annealing Temperature |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
| 2011-01 |
Effects of hydrogen on Au migration and the growth kinetics of Si nanowires |
CRYSTENGCOMM
|
| 2010-12 |
Growth of amorphous silicon oxide nanowires in the absence of a Si precursor through a solid state transformation |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
| 2010-11 |
Relaxation of misfit strain in silicon-germanium (Si1-xGe x) films during dry oxidation |
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
| 2010-10 |
Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition |
Applied Physics Letters
|
| 2010-10 |
The interfacial Electronic Structure of Fullerene/Ultra Thin Dielectrics of SiO2 and SiON |
Chemical Physics Letters
|
| 2010-10 |
Effect of Bonding Characteristics on the Instability of GexSb1-x Films |
Journal of The Electrochemical Society
|
| 2010-10 |
Performance Improvement of the Organic Light-Emitting Diodes by Using a LiF/Pyromellitic Dianhydride Stacked Cathode Interfacial Layer |
Journal of The Electrochemical Society
|
| 2010-10 |
The origin of the resistance change in GeSbTe films |
Applied Physics Letters
|
| 2010-08 |
Effect of interfacial reactions between atomic-layer-deposited HfO2 films and n-GaAs (100) substrate using postnitridation with NH3 vapor |
Applied Physics Letters
|
| 2010-06 |
Enhancement of Thermal Stability in Ni Silicides on Epi-Si1-xCx by Pt Addition |
Journal of The Electrochemical Society
|
| 2010-06 |
TEM Study on Volume Changes and Void Formation in Ge2Sb2Te5 Films, with Repeated Phase Changes |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2010-06 |
The Effects of Postannealing Treatment in Forming Gas on Low-k SiOC(H) Film |
Journal of The Electrochemical Society
|
| 2010-04 |
Improved thermal stability of Al2O3 /HfO2/Al2O3 high-k gate dielectric stack on GaAs |
Applied Physics Letters
|
| 2010-03 |
Effects of oxygen incorporation in GeSbTe films on electrical properties and thermal stability |
Applied Physics Letters
|
| 2010-02 |
Change in Band Alignment of Nitrided Hf-Silicate Films Grown on Ge(001) Using Gaseous NH3 |
ELECTROCHEMICAL AND SOLID STATE LETTERS
|
| 2010-02 |
The electronic structure of C60/ZnPc interface for organic photovoltaic device with blended layer architecture |
Applied Physics Letters
|
| 2010-02 |
Effect of In incorporated into SbTe on phase change characteristics resulting from changes in electronic structure |
Applied Physics Letters
|
| 2010-02 |
Behavior of Strain at a Thin Ge Pile-up Layer Formed by Dry Oxidation of a Si0.7Ge0.3 Film |
Thin Solid Films
|
| 2010-01 |
Changes in Gd2O3 films grown on Si(100) as a function of nitridation temperature and Zr incorporation |
Thin Solid Films
|
| 2010-01 |
The effect of copper hexadecafluorophthalocyanine (F16CuPc) inter-layer on pentacene thin-film transistors |
Synthetic Metals
|
| 2010-01 |
Crystallization Behaviors of Laser induced Ge2Sb2Te5 in Different Amorphous State |
Journal of The Electrochemical Society
|
| 2009-09 |
Electronic Structure of Te/Sb/Ge and Sb/Te/Ge Multi Layer Films Using Photoelectron Spectroscopy |
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
|
| 2009-08 |
The Effect of NH3 on the Interface of HfO2 and Al2O3 Films on GaAs(100) Surfaces |
Electrochemical And Solid State Letters
|
| 2009-07 |
Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films |
Applied Physics Letters
|
| 2009-06 |
Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature |
Applied Physics Letters
|
| 2009-05 |
Electronic and structural characteristics of Zr-incorporated Gd2O3 films on strained SiGe substrates |
Journal of Chemical Physics
|
| 2009-03 |
Nucleation Behavior of Atomic Layer Deposited SiO2 for Hf-Silicate Films |
Journal of the Electrochemical Society
|
| 2009-02 |
Structural Stability and Phase-Change Characteristics of Ge2Sb2Te5/SiO2 Nano-Multilayered Films |
Electrochemical And Solid State Letters
|
| 2009-02 |
Study of Hafnium Silicate Treated with NO Gas Annealing |
Journal Of The Korean Physical Society
|
| 2009-01 |
Instability of incorporated nitrogen in HfO2 films grown on strained Si0.7Ge0.3 layers |
Applied Physics Letters
|
| 2008-12 |
Thermal stability of Ni-Pt-Ta alloy silicides on epi-Si1-xCx |
Materials Science And Engineering B-Advanced Functional Solid-State Materials
|
| 2008-11 |
Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate |
Applied Physics Letters
|
| 2008-10 |
Band gap change and interfacial reaction in Hf-silicate film grown on Ge(001) |
Journal of Chemical Physics
|
| 2008-08 |
Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers |
Organic Electronics
|
| 2008-08 |
Energy level alignment in N,N `-bis(1-naphthyl)-N,N `-diphenyl-1,1 `-biphenyl-4,4 `-diamine (NPB)/hexadecafluoro copper phthalocyanine (F16CuPc)/Au and NPB/CuPc/Au heterojunction |
Synthetic Metals
|
| 2008-07 |
The characteristics and interfacial electronic structures of organic thin film transistor devices with ultrathin (HfO2)x(SiO 2)1-x gate dielectrics |
Applied Physics Letters
|
| 2008-07 |
Effects of reoxidation on band alignment in N-incorporated SiON films as a function of sequential thermal annealing in NO and N H3 |
Applied Physics Letters
|
| 2008-07 |
Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry |
Journal of Chemical Physics
|
| 2008-04 |
Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate |
Electrochemical and Solid State Letters
|