| 2024-03 |
Investigation on Contact Properties of 2D van der Waals Semimetallic 1T-TiS2/MoS2 Heterojunctions |
ACS Applied Materials & Interfaces
|
| 2024-03 |
Maximizing Schottky barrier modulation in graphene-WSe2/MoSe2 heterojunction barristor through Dirac-cone induced phenomenon |
Carbon
|
| 2024-01 |
Facile interfacial defect healing in solution-processed In-Ga-Zn-O thin film transistor through rapid intense pulsed light annealing |
Surfaces and Interfaces
|
| 2023-12 |
Low-temperature growth of MoS<inf>2</inf> on polymer and thin glass substrates for flexible electronics |
Nature Nanotechnology
|
| 2023-11 |
Negative Photoresponse Switching via Electron–Hole Recombination at The Type III Junction of MoTe2 Channel/SnS2 Top Layer |
Advanced Materials
|
| 2023-07 |
Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning |
Science Advances
|
| 2023-06 |
5 nm Ultrathin Crystalline Ferroelectric P(VDF-TrFE)-Brush Tuned for Hysteresis-Free Sub 60 mV dec(-1) Negative-Capacitance Transistors |
ADVANCED MATERIALS
|
| 2023-04 |
Electrical Transport Properties Driven by Unique Bonding Configuration in ?-GeSe |
Nano Letters
|
| 2023-02 |
Measuring the Bandgap of Ambipolar 2D Semiconductors using Multilayer Graphene Contact |
Small Science
|
| 2023-02 |
Self-Assembled TaOX/2H-TaS2 as a van der Waals Platform of a Multilevel Memristor Circuit Integrated with a β‑Ga2O3 Transistor |
ACS Nano
|
| 2023-01 |
Facile phase transition to β- from α-SnSe by uniaxial strain |
Current Applied Physics
|
| 2022-12 |
Ambipolar Nonvolatile Memory Behavior and Reversible Type-Conversion in MoSe<inf>2</inf>/MoSe<inf>2</inf> Transistors with Modified Stack Interface |
Advanced Functional Materials
|
| 2022-09 |
Performance enhancement of multilayer MoS2 phototransistors via photoresist encapsulation |
Current Applied Physics
|
| 2022-07 |
Graphene Via Contact Architecture for Vertical Integration of vdW Heterostructure Devices |
Small
|
| 2022-05 |
Ferroelastic–Ferroelectric Multiferroicity in van der Waals Rhenium Dichalcogenides |
Advanced Materials
|
| 2022-03 |
Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions |
npj 2D Materials and Applications
|
| 2022-03 |
Third-order optical nonlinearity in nucleobase solid thin solid film and its application for ultrashort light pulse generation |
Journal of Materials Chemistry C
|
| 2022-03 |
Damage-Free Charge Transfer Doping of 2D Transition Metal Dichalcogenide Channels by van der Waals Stamping of MoO3 and LiF |
Small Methods
|
| 2022-03 |
Quaternary NAND Logic and Complementary Ternary Inverter with p-MoTe2/n-MoS2 Heterostack Channel Transistors |
ADVANCED FUNCTIONAL MATERIALS
|
| 2022-02 |
Room Temperature Cmcm Phase of CaxSn1-xSe for Thermoelectric Energy Conversion |
ACS Applied Energy Materials
|
| 2022-02 |
Van der Waals crystal radio with Pt/MoSe2 Schottky diode and h-BN capacitor for RF energy harvesting |
NANO ENERGY
|
| 2021-11 |
Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe2/ReSe2 van der Waals Heterostructure |
ACS NANO
|
| 2021-10 |
Ultrathin platinum diselenide synthesis controlling initial growth kinetics: Interfacial reaction depending on thickness and substrate |
APPLIED SURFACE SCIENCE
|
| 2021-09 |
Ambipolar Channel p-TMD/n-Ga2O3 Junction Field Effect Transistors and High Speed Photo-sensing in TMD Channel |
ADVANCED MATERIALS
|
| 2021-05 |
Single-Crystalline Metallic Films Induced by van der Waals Epitaxy on Black Phosphorus |
CHEMISTRY OF MATERIALS
|
| 2021-05 |
High Performance β‐Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2 |
ADVANCED FUNCTIONAL MATERIALS
|
| 2021-05 |
Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3 Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors |
ACS APPLIED MATERIALS & INTERFACES
|
| 2021-05 |
2D MoS2 Charge Injection Memory Transistors Utilizing Hetero-Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps |
ADVANCED ELECTRONIC MATERIALS
|
| 2021-04 |
Dramatic Reduction of Contact Resistance via Ultrathin LiF in Two-Dimensional MoS2 Field Effect Transistors |
NANO LETTERS
|
| 2021-03 |
Nanowatt use 8 V switching nonvolatile memory transistors with 2D MoTe2 channel and ferroelectric P(VDF-TrFE) |
NANO ENERGY
|
| 2021-02 |
Dynamic Oscillation via Negative Differential Resistance in Type III Junction Organic/Two‐Dimensional and Oxide/Two‐Dimensional Transition Metal Dichalcogenide Diodes |
ADVANCED FUNCTIONAL MATERIALS
|
| 2020-12 |
Electrical joule heating for the isolation of ZnO nanowire channel and subsequent high-performance 1D circuit integration |
CURRENT APPLIED PHYSICS
|
| 2020-11 |
High-Performance van der Waals Junction Field-Effect Transistors Utilizing Organic Molecule/Transition Metal Dichalcogenide Interface |
ACS NANO
|
| 2020-10 |
Compact I-V Model for Ambipolar Field-Effect Transistors With 2D Transition Metal Dichalcogenide as Semiconductor |
IEEE TRANSACTIONS ON NANOTECHNOLOGY
|
| 2020-10 |
2D TMD Channel Transistors with ZnO Nanowire Gate for Extended Nonvolatile Memory Applications |
ADVANCED FUNCTIONAL MATERIALS
|
| 2020-09 |
Nonvolatile and Neuromorphic Memory Devices Using Interfacial Traps in Two Dimensional WSe2/MoTe2 Stack Channel |
ACS NANO
|
| 2020-09 |
Complementary Type Ferroelectric Memory Transistor Circuits with P- and N-Channel MoTe<inf>2</inf> |
ADVANCED ELECTRONIC MATERIALS
|
| 2020-08 |
Zero-Dimensional PbS Quantum Dot-InGaZnO Film Heterostructure for Short-Wave Infrared Flat-Panel Imager |
ACS PHOTONICS
|
| 2020-06 |
Compositional effect in pentagonal layered PdSe<inf>2</inf><inf>-x</inf>S<inf>x</inf> solid-solutions and their transport properties |
SCRIPTA MATERIALIA
|
| 2020-05 |
Tungsten Dichalcogenide Nanoflake/InGaZnO Thin-Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits |
ADVANCED ELECTRONIC MATERIALS
|
| 2020-03 |
Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance |
NATURE COMMUNICATIONS
|
| 2020-03 |
Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes |
ACS APPLIED MATERIALS & INTERFACES
|
| 2020-02 |
Low Voltage and Ferroelectric 2D Electron Devices Using Lead-Free BaxSr1-xTiO3 and MoS2 Channel |
ADVANCED FUNCTIONAL MATERIALS
|
| 2019-12 |
Advanced Multifunctional Field Effect Devices Using Common Gate for Both 2D Transition-Metal Dichalcogenide and InGaZnO Channels |
ADVANCED ELECTRONIC MATERIALS
|
| 2019-11 |
Synthesis of two-dimensional MoS2/graphene heterostructure by atomic layer deposition using MoF6 precursor |
APPLIED SURFACE SCIENCE
|
| 2019-11 |
Trap-assisted high responsivity of a phototransistor using bi-layer MoSe2 grown by molecular beam epitaxy |
APPLIED SURFACE SCIENCE
|
| 2019-10 |
Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection |
ADVANCED OPTICAL MATERIALS
|
| 2019-09 |
Impact of H-Doping on n-Type TMD Channels for Low-Temperature Band-Like Transport |
SMALL
|
| 2019-09 |
Integrated advantages from perovskite photovoltaic cell and 2D MoTe<inf>2</inf> transistor towards self-power energy harvesting and photosensing |
NANO ENERGY
|
| 2019-08 |
Stability, efficiency, and mechanism of n-type doping by hydrogen adatoms in two-dimensional transition metal dichalcogenides |
PHYSICAL REVIEW B
|
| 2019-07 |
All-2D ReS2 transistors with split gates for logic circuitry |
SCIENTIFIC REPORTS
|
| 2019-06 |
Explicit continuous IV model for 2D transition metal dichalcogenide field-effect transistors |
MICROELECTRONICS JOURNAL
|
| 2019-04 |
ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors |
NATURE COMMUNICATIONS
|
| 2019-04 |
Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS2 and p-MoTe2 Transistors |
NANO LETTERS
|
| 2019-03 |
Intrinsic Correlation between Electronic Structure and Degradation: From Few-Layer to Bulk Black Phosphorus |
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
|
| 2019-02 |
Monolayer MoS2 field-effect transistors patterned by photolithography for active matrix pixels in organic light-emitting diodes |
npj 2D Materials and Applications
|
| 2018-12 |
High-Performance 2D MoS2 Phototransistor for Photo Logic Gate and Image Sensor |
ACS PHOTONICS
|
| 2018-12 |
Direct Thermal Growth of Large Scale Cl-doped CdTe Film for Low Voltage High Resolution X-ray Image Sensor |
SCIENTIFIC REPORTS
|
| 2018-12 |
Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides |
npj 2D Materials and Applications
|
| 2018-10 |
2D MoSe2 Transistor with Polymer-Brush/Channel Interface |
ADVANCED MATERIALS INTERFACES
|
| 2018-10 |
2D WSe2/MoS2 van der Waals heterojunction photodiode for visible-near infrared broadband detection |
APPLIED PHYSICS LETTERS
|
| 2018-09 |
Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium-Tin-Oxide Source/Drain |
ADVANCED FUNCTIONAL MATERIALS
|
| 2018-08 |
High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time |
SCIENTIFIC REPORTS
|
| 2018-07 |
Few- layered a-MoTe2 Schottky junction for a high sensitivity chemical- vapour sensor |
JOURNAL OF MATERIALS CHEMISTRY C
|
| 2018-06 |
Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy |
ACS APPLIED MATERIALS & INTERFACES
|
| 2018-03 |
Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact |
NANO LETTERS
|
| 2018-01 |
Charge-Transfer-Induced p-Type Channel in MoS2Flake Field Effect Transistors |
ACS APPLIED MATERIALS & INTERFACES
|
| 2018-01 |
Polymer/oxide bilayer dielectric for hysteresis-minimized 1 v operating 2D TMD transistors |
RSC ADVANCES
|
| 2017-12 |
Charge Transport in 2D DNA Tunnel Junction Diodes |
SMALL
|
| 2017-12 |
Mixed-Dimensional 1D ZnO-2D WSe2 van der Waals Heterojunction Device for Photosensors |
ADVANCED FUNCTIONAL MATERIALS
|
| 2017-08 |
Homogeneous 2D MoTe2 p-n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping |
ADVANCED MATERIALS
|
| 2017-05 |
Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters |
ACS APPLIED MATERIALS & INTERFACES
|
| 2017-03 |
Work Function Tuning in Two-Dimensional MoS2 Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts |
SCIENTIFIC REPORTS
|
| 2017-01 |
DNA-based small molecules for hole charge injection and channel passivation in organic heptazole field effect transistors |
JOURNAL OF PHYSICS D-APPLIED PHYSICS
|
| 2017-01 |
Organic strain sensor comprised of heptazole-based thin film transistor and Schottky diode |
ORGANIC ELECTRONICS
|
| 2017-01 |
Transition Metal Dichalcogenide-Based Transistor Circuits for Gray Scale Organic Light-Emitting Displays |
ADVANCED FUNCTIONAL MATERIALS
|
| 2016-12 |
Transition metal dichalcogenide heterojunction PN diode toward ultimate photovoltaic benefits |
2D MATERIALS
|
| 2016-10 |
Two-dimensional van der Waals nanosheet devices for future electronics and photonics |
NANO TODAY
|
| 2016-09 |
Large scale MoS2 nanosheet logic circuits integrated by photolithography on glass |
2D MATERIALS
|
| 2016-09 |
Selective Dispersion of Highly Pure Large-Diameter Semiconducting Carbon Nanotubes by a Flavin for Thin Film Transistors |
ACS APPLIED MATERIALS & INTERFACES
|
| 2016-08 |
Enhanced Non-enzymatic amperometric sensing of glucose using Co(OH)(2) nanorods deposited on a three dimensional graphene network as an electrode material |
MICROCHIMICA ACTA
|
| 2016-06 |
Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers |
ADVANCED FUNCTIONAL MATERIALS
|
| 2016-06 |
Deep blue energy harvest photovoltaic switching by heptazole-based organic Schottky diode circuits |
NPG ASIA MATERIALS
|
| 2016-05 |
Non-Lithographic Fabrication of All-2D α-MoTe<inf>2</inf> Dual Gate Transistors |
ADVANCED FUNCTIONAL MATERIALS
|
| 2016-05 |
Ultrasensitive low power-consuming strain sensor based on complementary inverter composed of organic p- and n-channels |
ORGANIC ELECTRONICS
|
| 2016-04 |
Electric and Photovoltaic Behavior of a Few-Layer alpha-MoTe2/MoS2 Dichalcogenide Heterojunction |
ADVANCED MATERIALS
|
| 2016-02 |
Reply to "Comment on 'Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed" |
ACS NANO
|
| 2016-02 |
Black Phosphorus?Zinc Oxide Nanomaterial Heterojunction for p?n Diode and Junction Field-Effect Transistor |
NANO LETTERS
|
| 2016-01 |
Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors |
ACS NANO
|
| 2016-01 |
Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain |
NPG ASIA MATERIALS
|
| 2016-01 |
Copper Hydroxide Nanorods Decorated Porous Graphene Foam Electrodes for Non-enzymatic Glucose Sensing |
ELECTROCHIMICA ACTA
|
| 2016-01 |
Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides |
SCIENTIFIC REPORTS
|
| 2015-12 |
High-Performance, Air-Stable, Top-Gate, p-Channel WSe2 Field-Effect Transistor with Fluoropolymer Buffer Layer |
ADVANCED FUNCTIONAL MATERIALS
|
| 2015-11 |
Columnar deformation of human red blood cell by highly localized fiber optic Bessel beam stretcher |
BIOMEDICAL OPTICS EXPRESS
|